Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 494-497

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Abstract: 用MOCVD技术在50mm蓝宝石衬底(0001)面上生长了GaN∶Mg外延膜,对样品进行热退火处理并作了Hall、双晶X射线衍射(DCXRD)和室温光致发光谱(PL)测试.Hall测试结果表明,950℃退火后空穴浓度达到5e17cm-3以上,电阻率降到2.5Ω·cm;(0002)面DCXRD测试发现样品退火前、后的半峰宽均约为4′;室温PL谱中发光峰位于2.85eV处,退火后峰的强度比退火前增强了8倍以上,表明样品中大量被H钝化的受主Mg原子在退火后被激活.

1

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

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Journal of Semiconductors, 2014, 35(11): 113005. doi: 10.1088/1674-4926/35/11/113005

2

High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

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Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002

3

Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

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Journal of Semiconductors, 2011, 32(8): 083002. doi: 10.1088/1674-4926/32/8/083002

4

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, et al.

Journal of Semiconductors, 2008, 29(7): 1242-1245.

5

TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD

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6

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

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Journal of Semiconductors, 2008, 29(8): 1475-1478.

7

Optical and Electrical Properties of GaN:Mg Grown by MOCVD

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Journal of Semiconductors, 2008, 29(1): 29-32.

8

Heteroepitaxy of InP/GaAs by MOCVD

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9

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

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Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.

10

AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

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Chinese Journal of Semiconductors , 2007, 28(S1): 492-495.

11

Growth of High AI Content AIGaN Epilayer by MOCVD

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12

Growth and Characterization of m Plane GaN Material by MOCVD

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Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.

13

Influence of Temperature on MOCVD Growth of InGaN

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Chinese Journal of Semiconductors , 2007, 28(S1): 257-259.

14

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

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Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.

15

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

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Chinese Journal of Semiconductors , 2005, 26(S1): 106-108.

16

常压MOCVD生长的ZnO薄膜的电学性能

周鹏, 王立, 方文卿, 蒲勇, 戴江南, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 502-507.

17

InP基长波长光发射OEIC材料的MOCVD生长

江李, 林涛, 韦欣, 王国宏, 张广泽, et al.

Chinese Journal of Semiconductors , 2005, 26(2): 319-323.

18

High Resistivity GaN Film Grown by MOCVD

Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.

19

p型GaN的掺杂研究

金瑞琴, 朱建军, 赵德刚, 刘建平, 张纪才, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 508-512.

20

MOCVD法以NO气体为掺杂源生长p型ZnO薄膜

徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, et al.

Chinese Journal of Semiconductors , 2005, 26(1): 38-41.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      冉军学, 王晓亮, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. MOCVD生长Mg掺杂GaN的退火研究[J]. Journal of Semiconductors, 2005, 26(3): 494-497. ****MOCVD生长Mg掺杂GaN的退火研究[J]. Chin. J. Semicond., 2005, 26(3): 494.
      Citation:
      冉军学, 王晓亮, 胡国新, 王军喜, 李建平, 曾一平, 李晋闽. MOCVD生长Mg掺杂GaN的退火研究[J]. Journal of Semiconductors, 2005, 26(3): 494-497. ****
      MOCVD生长Mg掺杂GaN的退火研究[J]. Chin. J. Semicond., 2005, 26(3): 494.

      MOCVD生长Mg掺杂GaN的退火研究

      • Received Date: 2015-08-19

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