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1 |
Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD
Bo Liu, Jiayun Yin, Yuanjie Lü, Shaobo Dun, Xiongwen Zhang, et al.
Journal of Semiconductors, 2014, 35(11): 113005. doi: 10.1088/1674-4926/35/11/113005
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2 |
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, et al.
Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002
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3 |
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Tao Tao, Zhang Zhao, Liu Lian, Su Hui, Xie Zili, et al.
Journal of Semiconductors, 2011, 32(8): 083002. doi: 10.1088/1674-4926/32/8/083002
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4 |
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD
Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, et al.
Journal of Semiconductors, 2008, 29(7): 1242-1245.
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5 |
TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD
Zhu Hua, Li Cuiyun, Mo Chunlan, Jiang Fengyi, Zhang Meng, et al.
Journal of Semiconductors, 2008, 29(3): 539-543.
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6 |
Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN
Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al.
Journal of Semiconductors, 2008, 29(8): 1475-1478.
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7 |
Optical and Electrical Properties of GaN:Mg Grown by MOCVD
Wang Lili, Zhang Shuming, Yang Hui, Liang Junwu
Journal of Semiconductors, 2008, 29(1): 29-32.
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8 |
Heteroepitaxy of InP/GaAs by MOCVD
Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 190-192.
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9 |
Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD
Gao Lihua, Yang Yunke, Chen Haixin, Fu Song
Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.
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10 |
AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD
Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 492-495.
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11 |
Growth of High AI Content AIGaN Epilayer by MOCVD
Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 193-196.
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12 |
Growth and Characterization of m Plane GaN Material by MOCVD
Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.
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13 |
Influence of Temperature on MOCVD Growth of InGaN
Wang Lili, Wang Hui, Sun Xian, Wang Hai, Zhu Jianjun, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 257-259.
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14 |
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al.
Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.
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15 |
Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD
Chen Jun, Zhang Jicai, Zhang Shuming, Zhu Jianjun, Yang Hui, et al.
Chinese Journal of Semiconductors , 2005, 26(S1): 106-108.
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16 |
常压MOCVD生长的ZnO薄膜的电学性能
周鹏, 王立, 方文卿, 蒲勇, 戴江南, et al.
Chinese Journal of Semiconductors , 2005, 26(3): 502-507.
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17 |
InP基长波长光发射OEIC材料的MOCVD生长
江李, 林涛, 韦欣, 王国宏, 张广泽, et al.
Chinese Journal of Semiconductors , 2005, 26(2): 319-323.
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18 |
High Resistivity GaN Film Grown by MOCVD
Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al.
Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.
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19 |
p型GaN的掺杂研究
金瑞琴, 朱建军, 赵德刚, 刘建平, 张纪才, et al.
Chinese Journal of Semiconductors , 2005, 26(3): 508-512.
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20 |
MOCVD法以NO气体为掺杂源生长p型ZnO薄膜
徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, et al.
Chinese Journal of Semiconductors , 2005, 26(1): 38-41.
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