Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

Yu Changliang; Mao Luhong; Song Ruiliang; Zhu Haobo; Wang Rui; Wang Qian

Chin. J. Semicond. > 2007, Volume 28 > Issue 8 > 1198-1203

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Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui and Wang Qian

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Abstract: A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=1e-12.

Key words: photo-detector, optoelectronic integrated receiver, CMOS, active inductor

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Received: 18 August 2015 Revised: 05 April 2007 Online: Published: 01 August 2007

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=1e-12.

Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

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