Chin. J. Semicond. > 1988, Volume 9 > Issue 3 > 288-293
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溅射原子的初始位置分布和表面出口位置分布

郑里平 and 崔福斋

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(3): 288-293
      郑里平, 崔福斋. 溅射原子的初始位置分布和表面出口位置分布[J]. 半导体学报(英文版), 1988, 9(3): 288-293.
      Citation:
      郑里平, 崔福斋. 溅射原子的初始位置分布和表面出口位置分布[J]. 半导体学报(英文版), 1988, 9(3): 288-293.
      shu

      • Received Date: 2015-08-19

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