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10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver

Jiao Shilong, Ye Yutang, Chen Tangsheng, Feng Ou, Jiang Youquan, Fan Chao and Li Fuxiao

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Abstract: A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5μm GaAs PHEMT process.The amplifier has a measured -3dB bandwidth of 7.5GHz and a transimpedance gain of 45dBΩ.Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth.The equivalent input noise current spectral density varies from 14.3 to 22pA/Hz,with an average value of 17.2pA/Hz.Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

Key words: GaAs PHEMT, current mode, preamplifier, noise figure, eye diagram

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    Received: 18 August 2015 Revised: 27 August 2006 Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(1): 24-30
      Jiao Shilong, Ye Yutang, Chen Tangsheng, Feng Ou, Jiang Youquan, Fan Chao, Li Fuxiao. 10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver[J]. Journal of Semiconductors, 2007, 28(1): 24-30. ****Jiao S L, Ye Y T, Chen T S, Feng O, Jiang Y Q, Fan C, Li F X. 10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver[J]. Chin. J. Semicond., 2007, 28(1): 24.
      Citation:
      Jiao Shilong, Ye Yutang, Chen Tangsheng, Feng Ou, Jiang Youquan, Fan Chao, Li Fuxiao. 10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver[J]. Journal of Semiconductors, 2007, 28(1): 24-30. ****
      Jiao S L, Ye Y T, Chen T S, Feng O, Jiang Y Q, Fan C, Li F X. 10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver[J]. Chin. J. Semicond., 2007, 28(1): 24.
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      10Gb/s GaAs PHEMT Current Mode TransimpedancePreamplifier for Optical Receiver

      • School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing 210016,China

      • School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-07
      • Revised Date: 2006-08-27
      • Published Date: 2006-12-26

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