Chin. J. Semicond. > 1996, Volume 17 > Issue 10 > 784-788

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1996

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      陈维德,谢小龙,崔玉德,段俐宏,许振嘉. 利用快速热退火在n-GaAs上形成Ge/PdGe欧姆接触[J]. 半导体学报(英文版), 1996, 17(10): 784-788.
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      陈维德,谢小龙,崔玉德,段俐宏,许振嘉. 利用快速热退火在n-GaAs上形成Ge/PdGe欧姆接触[J]. 半导体学报(英文版), 1996, 17(10): 784-788.

      • Received Date: 2015-08-18

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