Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 450-453
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多栅GaAs MESFET开关的结构设计

陈新宇 , 郝西萍 and 陈继义

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Key words: 多栅, 开关, 金属半导体场效应晶体管, 砷化镓, 栅栅间距

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 450-453
      陈新宇, 郝西萍, 陈继义. 多栅GaAs MESFET开关的结构设计[J]. 半导体学报(英文版), 2004, 25(4): 450-453.
      Citation:
      陈新宇, 郝西萍, 陈继义. 多栅GaAs MESFET开关的结构设计[J]. 半导体学报(英文版), 2004, 25(4): 450-453.
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      • Received Date: 2015-08-19

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