| Citation: |
Xu Yun, Guo Liang, Cao Qing, Song Guofeng, Gan Qiaoqiang, Yang Guohua, Li Yuzhang, Chen Lianghui. Characteristic Analysis on High Power GaInP/AlGaInP Semiconductor Laser Diodes[J]. Journal of Semiconductors, 2005, 26(11): 2213-2217.
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Xu Y, Guo L, Cao Q, Song G F, Gan Q Q, Yang G H, Li Y Z, Chen L H. Characteristic Analysis on High Power GaInP/AlGaInP Semiconductor Laser Diodes[J]. Chin. J. Semicond., 2005, 26(11): 2213.
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Characteristic Analysis on High Power GaInP/AlGaInP Semiconductor Laser Diodes
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Abstract
High power AlGaInP compressively strained separate confinement heterojunction quantum well laser diodes with real refractive index are successfully fabricated.The epitaxial growth of the laser is carried out by a one-step MOCVD using a 15 degree -misoriented GaAs substrate.The laser diodes have a ridge-waveguide with a 3μm-wide,900μm-long, and 5%/95% coating.The typical threshold current of these devices is 32mA,the COD threshold is 88mW,and the continuous wave operation current and slope efficiency at 80mW are 110mA and 1W/A,respectively.Stable fundamental-mode operation at 60mW is obtained and the full angles at half-maximum power, perpendicular and parallel to the junction plane, are 32 degree and 10 degree,respectively.The lasing wavelength is 658.4nm.The internal loss is 4.1cm-1, the internal quantum efficiency is 80%, and the transparent current density is 648A/cm2. -
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