Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 329-332
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碳化硅CMOS反相器的特性

姬慧莲 , 杨银堂 , 郭中和 , 柴常春 and 李跃进

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Key words: 碳化硅, 反相器, 模拟

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 329-332
      姬慧莲, 杨银堂, 郭中和, 柴常春, 李跃进. 碳化硅CMOS反相器的特性[J]. 半导体学报(英文版), 2004, 25(3): 329-332.
      Citation:
      姬慧莲, 杨银堂, 郭中和, 柴常春, 李跃进. 碳化硅CMOS反相器的特性[J]. 半导体学报(英文版), 2004, 25(3): 329-332.
      shu

      • Received Date: 2015-08-19

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