| Citation: |
Chen Jiezhi, Shi Yi, Pu Lin, Long Shibing, Liu Ming, Zheng Youdou. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Journal of Semiconductors, 2007, 28(1): 69-72.
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Chen J Z, Shi Y, Pu L, Long S B, Liu M, Zheng Y D. Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor[J]. Chin. J. Semicond., 2007, 28(1): 69.
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Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor
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Abstract
To enhance the coupling strength between the gate and the quantum dot (QD) confined in the transport channel and improve the gain modulation factor,we develop a novel type of Si single-electron transistor (SET).Clear coulomb blockade oscillations and negative differential conductance (NDC) are observed at room temperature (RT).Based on the model of quantized energy levels of QDs,we analyze the transport mechanism of the fabricated devices,especially the effect of strong gate-dot coupling on the transport characteristics.The results demonstrate that 7.6nm QDs and a large gain modulation factor of 0.84 by controlling the thermal oxidation are achieved. -
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