Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 132-136
|

CONTENTS

有Si覆盖的部分氧化多孔硅的光致发光

顾沂 , 吴兴龙 , 唐宁 and 鲍希茂

+ Author Affiliations

PDF

Key words: 多孔硅, 光致发光, 部分氧化

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2450 Times PDF downloads: 916 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 132-136
      顾沂, 吴兴龙, 唐宁, 鲍希茂. 有Si覆盖的部分氧化多孔硅的光致发光[J]. 半导体学报(英文版), 2000, 21(2): 132-136.
      Citation:
      顾沂, 吴兴龙, 唐宁, 鲍希茂. 有Si覆盖的部分氧化多孔硅的光致发光[J]. 半导体学报(英文版), 2000, 21(2): 132-136.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return