Chin. J. Semicond. > 1995, Volume 16 > Issue 12 > 897-900
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MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究

牛智川，周增圻，林耀望，李朝勇

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(12): 897-900
      牛智川，周增圻，林耀望，李朝勇. MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究[J]. 半导体学报(英文版), 1995, 16(12): 897-900.
      Citation:
      牛智川，周增圻，林耀望，李朝勇. MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究[J]. 半导体学报(英文版), 1995, 16(12): 897-900.
      shu

      • Received Date: 2015-08-19

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