Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1345-1348

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隔离技术对SOI PMOSFET中空穴迁移率的影响

赵洪辰 , 海潮和 , 韩郑生 and 钱鹤

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Key words: LOCOS, MESA, 迁移率, 应力

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1345-1348
      赵洪辰, 海潮和, 韩郑生, 钱鹤. 隔离技术对SOI PMOSFET中空穴迁移率的影响[J]. 半导体学报(英文版), 2004, 25(10): 1345-1348.
      Citation:
      赵洪辰, 海潮和, 韩郑生, 钱鹤. 隔离技术对SOI PMOSFET中空穴迁移率的影响[J]. 半导体学报(英文版), 2004, 25(10): 1345-1348.
      shu

      • Received Date: 2015-08-19

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