| Citation: |
Duan Baoxing, Huang Yongguang, Zhang Bo, Li Zhaoji. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Journal of Semiconductors, 2007, 28(8): 1262-1266.
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Duan B X, Huang Y G, Zhang B, Li Z J. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Chin. J. Semicond., 2007, 28(8): 1262.
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Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure
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Abstract
The results of an experiment on REBULF LDMOS are analyzed.The increased leakage current is due to the n+-floating layer,as proved by the test results of breakdown voltage.However,the breakdown voltage decreases as a result of the leakage current of the n+p junction being exposed to the surface.In order to resolve this problem,a REBULF LDMOS with a partial n+-floating layer is proposed for the first time.An effective REBULF is obtained using this structure,and the large leakage current of Ref.［10］ is eliminated by an inner n+p junction around the source.The results show that the breakdown voltage is increased by 60% in comparison with traditional RESURF LDMOS.-
Keywords:
- LDMOS,
- n+-floating layer,
- effect of REBULF,
- breakdown voltage
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References
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Proportional views
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