Chin. J. Semicond. > 1994, Volume 15 > Issue 7 > 444-449
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低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光

俞容文，郑健生，糜东林，颜炳章

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(7): 444-449
      俞容文，郑健生，糜东林，颜炳章. 低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光[J]. 半导体学报(英文版), 1994, 15(7): 444-449.
      Citation:
      俞容文，郑健生，糜东林，颜炳章. 低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光[J]. 半导体学报(英文版), 1994, 15(7): 444-449.
      shu

      • Received Date: 2015-08-18

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