
PAPERS
Abstract: The ground state of a magnetopolaron that is weakly coupled with bulk longitudinal optical phonons and strongly coupled with interface optical phonons,in an infinite quantum well within magnetic fields is studied using the linear-combination operator and a modified LLP variational method.Rules for how the vibration frequency and self-trapping energy of the magnetopolaron change with the width of the quantum well and the magnetic fields are obtained.Our numerical results for a CdF2/AgCl QW show that the vibration frequency and the self-trapping energy of the magnetopolaron decrease with increasing well width and increase with increasing magnetic fields strength,but the contribution of interaction between the different branches of phonons and the electron and the magnetic fields to the vibration frequency and the self-trapping energy of the magnetopolaron are greatly different.The above-mentioned phenomena are also analyzed.
Key words: quantum well, magnetopolaron, vibration frequency, self-trapping energy
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Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode A. Menani, L. Dehimi, S. Dehimi, F. Pezzimenti Journal of Semiconductors, 2020, 41(6): 062301. doi: 10.1088/1674-4926/41/6/062301 |
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Wei Xiao, Jinglin Xiao Journal of Semiconductors, 2019, 40(4): 042901. doi: 10.1088/1674-4926/40/4/042901 |
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Magnetopolaron effects on the optical absorptions in a parabolic quantum dot Shihua Chen Journal of Semiconductors, 2016, 37(9): 092004. doi: 10.1088/1674-4926/37/9/092004 |
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Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot M. Tiotsop, A. J. Fotue, S. C. Kenfack, N. Issofa, A. V. Wirngo, et al. Journal of Semiconductors, 2015, 36(10): 102001. doi: 10.1088/1674-4926/36/10/102001 |
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Wei Xin, Yuwei Zhao, Chao Han, Eerdunchaolu Journal of Semiconductors, 2013, 34(5): 052001. doi: 10.1088/1674-4926/34/5/052001 |
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Fabrication and characterization of a low frequency electromagnetic energy harvester Abu Riduan Md. Foisal, Gwiy-Sang Chung Journal of Semiconductors, 2012, 33(7): 074001. doi: 10.1088/1674-4926/33/7/074001 |
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J. Abraham Hudson Mark, A. John Peter Journal of Semiconductors, 2012, 33(9): 092001. doi: 10.1088/1674-4926/33/9/092001 |
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Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001 |
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MOS Capacitance–Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(4): 041001. doi: 10.1088/1674-4926/32/4/041001 |
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Ha Sihua, Ban Shiliang, Zhu Jun Journal of Semiconductors, 2011, 32(4): 042001. doi: 10.1088/1674-4926/32/4/042001 |
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Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells Zhu Jun, Ban Shiliang, Ha Sihua Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002 |
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Shan Shuping, Xiao Jinglin Journal of Semiconductors, 2008, 29(3): 438-441. |
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Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode Wei Qiyuan, Li Ti, Wang Yanjie, Chen Weihua, Li Rui, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 471-474. |
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Room Temperature Continuous Wave Quantum Well Lasers Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 486-488. |
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Calculation of the Efficiency of GaAs Quantum Well Solar Cells Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1038-1041. |
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Bound Polaron in a Quantum Well Under an Electric Field Chen Weili, Xiao Jinglin Chinese Journal of Semiconductors , 2006, 27(5): 787-791. |
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Growth and Optical Properties of ZnO Films and Quantum Wells Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al. Chinese Journal of Semiconductors , 2006, 27(4): 613-622. |
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Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm Chinese Journal of Semiconductors , 2005, 26(9): 1688-1691. |
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Received: 20 August 2015 Revised: Online: Published: 01 May 2006
Citation: |
Eerdunchaolu, Wuyunqimuge, Xu Qiu, Bai Xufang. Properties of Quasi-Two-Dimensional Strong-CouplingMagnetopolarons in Magnetic Fields[J]. Journal of Semiconductors, 2006, 27(5): 824-829.
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E E D C L, Wu Y Q M G, Xu Q, Bai X F. Properties of Quasi-Two-Dimensional Strong-CouplingMagnetopolarons in Magnetic Fields[J]. Chin. J. Semicond., 2006, 27(5): 824.
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