Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

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何进, 黄如, 张兴, 黄爱华, 孙飞, 王阳元. Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current[J]. 半导体学报(英文版), 2000, 21(12): 1145-1151.

Citation:

何进, 黄如, 张兴, 黄爱华, 孙飞, 王阳元. Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current[J]. 半导体学报(英文版), 2000, 21(12): 1145-1151.

何进, 黄如, 张兴, 黄爱华, 孙飞, 王阳元. Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current[J]. 半导体学报(英文版), 2000, 21(12): 1145-1151.

Citation:

何进, 黄如, 张兴, 黄爱华, 孙飞, 王阳元. Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current[J]. 半导体学报(英文版), 2000, 21(12): 1145-1151.

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