Chin. J. Semicond. > 1989, Volume 10 > Issue 8 > 626-631
|

CONTENTS

硅中离子注入掺杂原子的增强扩散系数的分布

曾论

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3109 Times PDF downloads: 1414 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 August 1989

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1989  >  10(8): 626-631
      曾论. 硅中离子注入掺杂原子的增强扩散系数的分布[J]. 半导体学报(英文版), 1989, 10(8): 626-631.
      Citation:
      曾论. 硅中离子注入掺杂原子的增强扩散系数的分布[J]. 半导体学报(英文版), 1989, 10(8): 626-631.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return