Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 365-368
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MOCVD生长P型GaN的掺Mg量的研究

李述体 , 王立 , 彭学新 , 熊传兵 , 姚冬敏 , 辛勇 and 江风益

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Key words: GaN, MOCVD, 掺Mg量

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 365-368
      李述体, 王立, 彭学新, 熊传兵, 姚冬敏, 辛勇, 江风益. MOCVD生长P型GaN的掺Mg量的研究[J]. 半导体学报(英文版), 2000, 21(4): 365-368.
      Citation:
      李述体, 王立, 彭学新, 熊传兵, 姚冬敏, 辛勇, 江风益. MOCVD生长P型GaN的掺Mg量的研究[J]. 半导体学报(英文版), 2000, 21(4): 365-368.
      shu

      • Received Date: 2015-08-20

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