Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 933-936
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GaAs高温退火过程中热应力对晶体缺陷的影响

黎建明 , 屠海令 , 胡广勇 , 王超群 , 郑安生 and 钱嘉裕

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Key words: GaAs, 退火, 小角晶界, 三轴晶模式衍射

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 933-936
      黎建明, 屠海令, 胡广勇, 王超群, 郑安生, 钱嘉裕. GaAs高温退火过程中热应力对晶体缺陷的影响[J]. 半导体学报(英文版), 2003, 24(9): 933-936.
      Citation:
      黎建明, 屠海令, 胡广勇, 王超群, 郑安生, 钱嘉裕. GaAs高温退火过程中热应力对晶体缺陷的影响[J]. 半导体学报(英文版), 2003, 24(9): 933-936.
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      • Received Date: 2015-08-20

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