Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 656-661
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Si上Si_(1-x-y)Ge_xC_y三元合金薄膜的化学气相淀积生长研究

江宁 , 臧岚 , 江若琏 , 朱顺明 , 刘夏冰 , 程雪梅 , 韩平 , 王荣华 , 胡晓宁 and 方家熊

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 656-661
      江宁, 臧岚, 江若琏, 朱顺明, 刘夏冰, 程雪梅, 韩平, 王荣华, 胡晓宁, 方家熊. Si上Si_(1-x-y)Ge_xC_y三元合金薄膜的化学气相淀积生长研究[J]. 半导体学报(英文版), 1999, 20(8): 656-661.
      Citation:
      江宁, 臧岚, 江若琏, 朱顺明, 刘夏冰, 程雪梅, 韩平, 王荣华, 胡晓宁, 方家熊. Si上Si_(1-x-y)Ge_xC_y三元合金薄膜的化学气相淀积生长研究[J]. 半导体学报(英文版), 1999, 20(8): 656-661.
      shu

      • Received Date: 2015-08-20

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