Citation: |
郑一阳. GaAs体效应器件中阴极深凹槽引起的静止畴的实验研究[J]. 半导体学报(英文版), 1985, 6(5): 475-480.
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Received: 20 August 2015 Revised: Online: Published: 01 May 1985
Citation: |
郑一阳. GaAs体效应器件中阴极深凹槽引起的静止畴的实验研究[J]. 半导体学报(英文版), 1985, 6(5): 475-480.
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