Chin. J. Semicond. > 1988, Volume 9 > Issue 3 > 328-331
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InGaAs中Be离子注入的研究

张永刚 , 富小妹 , 潘慧珍 , 陈如意 and 张荟星

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(3): 328-331
      张永刚, 富小妹, 潘慧珍, 陈如意, 张荟星. InGaAs中Be离子注入的研究[J]. 半导体学报(英文版), 1988, 9(3): 328-331.
      Citation:
      张永刚, 富小妹, 潘慧珍, 陈如意, 张荟星. InGaAs中Be离子注入的研究[J]. 半导体学报(英文版), 1988, 9(3): 328-331.
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      • Received Date: 2015-08-19

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