| Citation: |
Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, Xiao Hongling, Wang Junxi, Liu Hongxin, Zeng Yiping, Li Jinmin. Growth of High AI Content AIGaN Epilayer by MOCVD[J]. Journal of Semiconductors, 2007, 28(S1): 193-196.
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Wang X Y, Wang X L, Hu G X, Wang B Z, Li J P, Xiao H L, Wang J X, Liu H X, Zeng Y P, Li J M. Growth of High AI Content AIGaN Epilayer by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 193.
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Growth of High AI Content AIGaN Epilayer by MOCVD
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Abstract
High AI content A1GaN films are grown on sapphire substrate by metalorganie chemical vapor deposition (MOCVD) using AIN/AIGaN superlattices.Transmission measurements combined with double·crystal X-ray diffraction (DCXRD) And scanning electron microscopy (SEM) are used to characterize the AIGaN epilayers.The optical properties， crystal quality and surface morphology of A1GaN epilayers deposited at 1.33×10^4 and 0.66 X 10^4 Pa are also compared.-
Keywords:
- MOCVD,
- A1GaN,
- transmittance,
- XRD,
- SEM
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References
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Proportional views
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