Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD

Zhou Xincui; Ye Zhizhen; Chen Fugang; Xu Weizhong; Miao Yan; Huang Jingyun; Lü Jianguo; Zhu Liping; Zhao Binghui

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Zhou Xincui, Ye Zhizhen, Chen Fugang, Xu Weizhong, Miao Yan, Huang Jingyun, Lü Jianguo, Zhu Liping, Zhao Binghui. Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD[J]. Journal of Semiconductors, 2006, 27(1): 91-95. ****Zhou X C, Ye Z Z, Chen F G, Xu W Z, Miao Y, Huang J Y, Lü J, Zhu L P, Zhao B H. Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD[J]. Chin. J. Semicond., 2006, 27(1): 91.

Citation:

Zhou Xincui, Ye Zhizhen, Chen Fugang, Xu Weizhong, Miao Yan, Huang Jingyun, Lü Jianguo, Zhu Liping, Zhao Binghui. Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD[J]. Journal of Semiconductors, 2006, 27(1): 91-95. ****

Zhou X C, Ye Z Z, Chen F G, Xu W Z, Miao Y, Huang J Y, Lü J, Zhu L P, Zhao B H. Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD[J]. Chin. J. Semicond., 2006, 27(1): 91.

Citation:

Zhou X C, Ye Z Z, Chen F G, Xu W Z, Miao Y, Huang J Y, Lü J, Zhu L P, Zhao B H. Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD[J]. Chin. J. Semicond., 2006, 27(1): 91.

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Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD

State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China
State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

Received Date: 2015-08-20

Abstract

Abstract

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition.DEZn,O2,and P2O5 powder are used as reactant and dopant sources.The p-type ZnO films are grown at a temperature between 400 and 450℃.The best p-type sample has a low resistivity of 4.64Ω·cm,a hole concentration of 1.61×10¹⁸cm^-3,and a Hall mobility of 0.838cm²/(V·s) at room temperature.A strong emission peak at 3.354eV corresponding to neutral acceptor bound excitons is observed at 77K in the photoluminescence spectra,further verifying the p-type characteristics of the films
- p-type ZnO,
- metalorganic chemical vapor deposition,
- phosphorus-doping

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