Citation: |
Kong Meiying, Zeng Yiping, Li Jinmin. Tuning of infrared absorption wavelength of MBE InGaAs/GaAs quantum Dots[J]. Journal of Semiconductors, 2003, 24(S1): 78-80.
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Kong M Y, Zeng Y P, Li J M. Tuning of infrared absorption wavelength of MBE InGaAs/GaAs quantum Dots[J]. Chin. J. Semicond., 2003, 24(S1): 78.
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Tuning of infrared absorption wavelength of MBE InGaAs/GaAs quantum Dots
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Abstract
The self-assembled InGaAs/GaAs quantum dots superlattices for 8 ~ 12pm infrared photodetector working at atmospheric window are grown by MBE. It is demonstrated that the intersublevel absorption wavelength of InGaAs/GaAs quantum dot superlattices can be ad usted by varying the shape and size of quantum dots and the thickness of InGaAs layer. It is observed that as the thickness of InGaAs layer increased the infrared absorption peak blue-shifts from 15 to 10pm. The changes can be attributed to the enhanced effect of coupling between quantum dots.-
Keywords:
- molecular bean epitaxy,
- quantum dots,
- InGaAs/GaAs,
- infrared absorption
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References
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Proportional views