Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 60-64

Red Light Emission from Si-Based Fabry-Perot Microcavities

Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng and Liu Litian

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Abstract: A microcavity prepared by PE VD is proposed. Its distributed Bragg ref1ectors are composed of periodica11y stacked a-SiO2 = H/ a-Si= H 1ayers and the active 1ayer is filled With a-Si I= H. The structure ofa microcavity is determined through simu1ating. In eXperiment, a microcavity is prepared at 250 and annea1ed at different temperatures. Ref1ectance and Pl spectra are recorded on as-deposited and annea1ed samp1es. It is indicated that the as-deposited samp1e performs We11 and even better after annea1ed at 350 , however Worse after annea1ed at 450 .

Key words: microcavity Bragg ref1ector PECVD annealing

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng, Liu Litian. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Journal of Semiconductors, 2003, 24(S1): 60-64. ****Dan Y P, Yao Y Z, Wang Y, Yue R F, Liu L T. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Chin. J. Semicond., 2003, 24(S1): 60.
      Citation:
      Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng, Liu Litian. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Journal of Semiconductors, 2003, 24(S1): 60-64. ****
      Dan Y P, Yao Y Z, Wang Y, Yue R F, Liu L T. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Chin. J. Semicond., 2003, 24(S1): 60.

      Red Light Emission from Si-Based Fabry-Perot Microcavities

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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