Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 60-64
|

Red Light Emission from Si-Based Fabry-Perot Microcavities

Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng and Liu Litian

+ Author Affiliations

PDF

Abstract: A microcavity prepared by PE VD is proposed. Its distributed Bragg ref1ectors are composed of periodica11y stacked a-SiO2 = H/ a-Si= H 1ayers and the active 1ayer is filled With a-Si I= H. The structure ofa microcavity is determined through simu1ating. In eXperiment, a microcavity is prepared at 250 and annea1ed at different temperatures. Ref1ectance and Pl spectra are recorded on as-deposited and annea1ed samp1es. It is indicated that the as-deposited samp1e performs We11 and even better after annea1ed at 350 , however Worse after annea1ed at 450 .

Key words: microcavity,  Bragg ref1ector,  PECVD,  annealing

1

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Nuo Xu, Gaoqiang Deng, Haotian Ma, Shixu Yang, Yunfei Niu, et al.

Journal of Semiconductors, 2024, 45(4): 042501. doi: 10.1088/1674-4926/45/4/042501
2

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, et al.

Journal of Semiconductors, 2024, 45(8): 082501. doi: 10.1088/1674-4926/24010017
3

Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka

Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001
4

Improved memory performance of metal-oxide-nitride-oxide-silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

Meilin He, Jingping Xu, Jianxiong Chen, Lu Liu

Journal of Semiconductors, 2013, 34(11): 114005. doi: 10.1088/1674-4926/34/11/114005
5

Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition

Xiao Qingquan, Xie Quan, Chen Qian, Zhao Kejie, Yu Zhiqiang, et al.

Journal of Semiconductors, 2011, 32(8): 082002. doi: 10.1088/1674-4926/32/8/082002
6

Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC

Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, et al.

Journal of Semiconductors, 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002
7

Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

Wu Chunbo, Zhou Yuqin, Li Guorong, Liu Fengzhen

Journal of Semiconductors, 2011, 32(9): 096001. doi: 10.1088/1674-4926/32/9/096001
8

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Shi Mingji, Wang Zhanguo, Liu Shiyong, Peng Wenbo, Xiao Haibo, et al.

Journal of Semiconductors, 2009, 30(6): 063001. doi: 10.1088/1674-4926/30/6/063001
9

Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells

Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, et al.

Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010
10

Annealing behavior of radiation damage in JFET-input operational amplifiers

Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Guo Qi, et al.

Journal of Semiconductors, 2009, 30(5): 055001. doi: 10.1088/1674-4926/30/5/055001
11

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

Liu Xiang, Wei Fuxiang, Liu Hui

Journal of Semiconductors, 2009, 30(4): 044007. doi: 10.1088/1674-4926/30/4/044007
12

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

Tang Longjuan, Zhu Yinfang, Yang Jinling, Li Yan, Zhou Wei, et al.

Journal of Semiconductors, 2009, 30(9): 096005. doi: 10.1088/1674-4926/30/9/096005
13

Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin

Journal of Semiconductors, 2008, 29(11): 2265-2269.

14

High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN

Zhang Yuezong, Feng Shiwei, Zhang Gongchang, Wang Chengdong, Lü Changzhi, et al.

Chinese Journal of Semiconductors , 2007, 28(6): 984-988.

15

Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD

Chen Yongsheng, Wang Jianhua, Lu Jingxiao, Yang Gen, Gao Xiaoyong, et al.

Chinese Journal of Semiconductors , 2007, 28(7): 1005-1008.

16

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Chen San, Qian Bo, Chen Kunji, Cen Zhanhong, Liu Yansong, et al.

Chinese Journal of Semiconductors , 2006, 27(S1): 25-28.

17

Etching Characteristics of PECVD SiC

Chen Sheng, 李志宏, Li Zhihong, Zhang Guobing, Guo Hui, et al.

Chinese Journal of Semiconductors , 2006, 27(S1): 381-384.

18

High Rate Deposition of Device Quality Microcrystalline Si Transition Regime Films Using RF-PECVD

Zhou Bingqing, Zhu Meifang, Liu Fengzhen, Liu Jinlong, Gu Jinhua, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 98-101.

19

Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD

Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, et al.

Chinese Journal of Semiconductors , 2003, 24(3): 409-412.

20

Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD

YANG Hui-dong, WU Chun-ya, MAI Yao-hua, LI Hong-bo, XUE Jun-ming, et al.

Chinese Journal of Semiconductors , 2002, 23(9): 902-908.

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1997 Times PDF downloads: 471 Times Cited by: 0 Times

    History

    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 60-64
      Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng, Liu Litian. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Journal of Semiconductors, 2003, 24(S1): 60-64. ****Dan Y P, Yao Y Z, Wang Y, Yue R F, Liu L T. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Chin. J. Semicond., 2003, 24(S1): 60.
      Citation:
      Dan Yaping, Yao Yongzhao, Wang Yan, Yue Ruifeng, Liu Litian. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Journal of Semiconductors, 2003, 24(S1): 60-64. ****
      Dan Y P, Yao Y Z, Wang Y, Yue R F, Liu L T. Red Light Emission from Si-Based Fabry-Perot Microcavities[J]. Chin. J. Semicond., 2003, 24(S1): 60.
      shu

      Red Light Emission from Si-Based Fabry-Perot Microcavities

      • Institute of Microelectronics, Tsinghua University, Beijing 100084,Institute of Microelectronics, Tsinghua University, Beijing 100084,Institute of Microelectronics, Tsinghua University, Beijing 100084,Institute of Microelectronics, Tsinghua University, Beijing 100084 and Institute of Microelectronics, Tsinghua University, Beijing 100084

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return