Chin. J. Semicond. > 1996, Volume 17 > Issue 2 > 88-92
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GaInP材料生长及其性质研究

董建荣，刘祥林，陆大成，汪度，王晓晖，王占国

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(2): 88-92
      董建荣，刘祥林，陆大成，汪度，王晓晖，王占国. GaInP材料生长及其性质研究[J]. 半导体学报(英文版), 1996, 17(2): 88-92.
      Citation:
      董建荣，刘祥林，陆大成，汪度，王晓晖，王占国. GaInP材料生长及其性质研究[J]. 半导体学报(英文版), 1996, 17(2): 88-92.
      shu

      • Received Date: 2015-08-18

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