Chin. J. Semicond. > 1989, Volume 10 > Issue 8 > 641-644

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InP中的Be、P共注入及其退火特性研究

张永刚 , 富小妹 and 潘慧珍

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(8): 641-644
      张永刚, 富小妹, 潘慧珍. InP中的Be、P共注入及其退火特性研究[J]. 半导体学报(英文版), 1989, 10(8): 641-644.
      Citation:
      张永刚, 富小妹, 潘慧珍. InP中的Be、P共注入及其退火特性研究[J]. 半导体学报(英文版), 1989, 10(8): 641-644.
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      • Received Date: 2015-08-19

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