PAPERS
Ma Ping, Wei Tongbo, Duan Ruifei, Wang Junxi, Li Jinmin and Zeng Yiping
Abstract: Growth of GaN film by HVPE was carried out on MOCVD-GaN template and sapphire substrate.The surface of GaN film grown on GaN template was flat and bright,but cracked heavily.The FWHM for GaN (0002) DCXRD is at least 141" .The quality of samples grown directly on sapphire substrate was poor,with a FWHM 1688" for GaN (0002),but it did not crack at all.The carrier gas flow rate was found to have a great effect on pre-reactions.Stress was produced at the interface between the epitaxial layer and the substrate.Holes at the interface can relax the stress greatly,which is helpful for reducing cracks.The yellow luminescence in the PL spectrum arose from O impurity.
Key words: HVPE, GaN, sapphire substrate
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Received: 18 August 2015 Revised: 11 December 2006 Online: Published: 01 June 2007
| Citation: |
Ma Ping, Wei Tongbo, Duan Ruifei, Wang Junxi, Li Jinmin, Zeng Yiping. Growth of GaN Thick Film by HVPE on Sapphire Substrate[J]. Journal of Semiconductors, 2007, 28(6): 902-908.
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Ma P, Wei T B, Duan R F, Wang J X, Li J M, Zeng Y P. Growth of GaN Thick Film by HVPE on Sapphire Substrate[J]. Chin. J. Semicond., 2007, 28(6): 902.
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