Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Zhang Miao; Di Zengfeng; Liu Weili; Luo Suhua; Song Zhitang; Chu Paul K; Lin Chenglu

Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 252-256

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Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Zhang Miao, Di Zengfeng, Liu Weili, Luo Suhua, Song Zhitang, Chu Paul K and Lin Chenglu

Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Department of Physics and Material Science,City University of Hong Kong,Hong Kong,China
Research Center of Semiconductor Functional Film Engineering Technology,State Key Laboratory ofFunctional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Abstract: An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation and successive annealing of the sandwiched structure,a relaxed SGOI structure with 18% Ge fraction is produced.The results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction.Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature (～1150℃) without generating any threading dislocations and crosshatch patterns,which generally exist in the relaxed SiGe layer on bulk Si substrate.

Key words: SiGe-on-insulator, oxidation, diffusion

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Zhang Miao, Di Zengfeng, Liu Weili, Luo Suhua, Song Zhitang, Chu Paul K, Lin Chenglu. Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique[J]. Journal of Semiconductors, 2006, 27(S1): 252-256.

Zhang M, Di Z F, Liu W L, Luo S H, Song Z T, Chu P K, Lin C L. Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique[J]. Chin. J. Semicond., 2006, 27(13): 252.

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Received: 20 August 2015 Revised: Online: Published: 01 December 2006

An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation and successive annealing of the sandwiched structure,a relaxed SGOI structure with 18% Ge fraction is produced.The results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction.Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature (～1150℃) without generating any threading dislocations and crosshatch patterns,which generally exist in the relaxed SiGe layer on bulk Si substrate.

Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

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