Chin. J. Semicond. > 1999, Volume 20 > Issue 3 > 188-193
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基区复合对nSi/pSi_(1-x)Ge_x/nSi晶体管共射极电流增益的影响

安俊明 , 李建军 , 魏希文 , 沈光地 , 陈建新 and 邹德恕

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(3): 188-193
      安俊明, 李建军, 魏希文, 沈光地, 陈建新, 邹德恕. 基区复合对nSi/pSi_(1-x)Ge_x/nSi晶体管共射极电流增益的影响[J]. 半导体学报(英文版), 1999, 20(3): 188-193.
      Citation:
      安俊明, 李建军, 魏希文, 沈光地, 陈建新, 邹德恕. 基区复合对nSi/pSi_(1-x)Ge_x/nSi晶体管共射极电流增益的影响[J]. 半导体学报(英文版), 1999, 20(3): 188-193.
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      • Received Date: 2015-08-20

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