Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 513-516
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液相外延HgCdTe薄膜组分均匀性的研究

马庆华, 陈建才, 吴军, 孔金丞, 杨宇 and 姬荣斌

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Abstract: 用水平推舟液相外延的方法，以CdZnTe作衬底，固态HgTe作为Hg补偿源，从富Te-HgCdTe溶液中外延生长大面积HgCdTe薄膜。通过选择合适的温度控制和生长速率，获得组分均匀性和重复性较好的大面积长波HgCdTe薄膜。

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 513-516
      马庆华, 陈建才, 吴军, 孔金丞, 杨宇, 姬荣斌. 液相外延HgCdTe薄膜组分均匀性的研究[J]. Journal of Semiconductors, 2005, 26(3): 513-516. ****液相外延HgCdTe薄膜组分均匀性的研究[J]. Chin. J. Semicond., 2005, 26(3): 513.
      Citation:
      马庆华, 陈建才, 吴军, 孔金丞, 杨宇, 姬荣斌. 液相外延HgCdTe薄膜组分均匀性的研究[J]. Journal of Semiconductors, 2005, 26(3): 513-516. ****
      液相外延HgCdTe薄膜组分均匀性的研究[J]. Chin. J. Semicond., 2005, 26(3): 513.
      shu

      液相外延HgCdTe薄膜组分均匀性的研究

      • Received Date: 2015-08-19

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