Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 42-45
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硅基AlN薄膜制备技术与测试分析

于毅, 任天令 and 刘理天

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Abstract: 采用直流磁控反应溅射法，在Si(100)，Al/Si(100)和Pt/Ti/Si(100)等多种衬底上制备了用于MEMS器件的AlN薄膜．用XRD和AES对薄膜的结构和组分进行了分析，通过优化工艺参数，得到了提高薄膜择优取向的方法，并分析了不同衬底上AlN晶粒生长的有关机理．制备的AlN薄膜显示出良好的〈002〉择优取向性，摇摆曲线的半高宽达到5.6°．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 42-45
      于毅, 任天令, 刘理天. 硅基AlN薄膜制备技术与测试分析[J]. Journal of Semiconductors, 2005, 26(1): 42-45. ****于毅, 任天令, 刘理天. 2005: 硅基AlN薄膜制备技术与测试分析. Journal of Semiconductors, 26(1): 42-45.
      Citation:
      于毅, 任天令, 刘理天. 硅基AlN薄膜制备技术与测试分析[J]. Journal of Semiconductors, 2005, 26(1): 42-45. ****
      于毅, 任天令, 刘理天. 2005: 硅基AlN薄膜制备技术与测试分析. Journal of Semiconductors, 26(1): 42-45.
      shu

      硅基AlN薄膜制备技术与测试分析

      • Received Date: 2015-08-19

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