Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 265-270
|

CONTENTS

4H-SiC混合 PN/ Schottky二极管的研制(英文)

张玉明 , 张义门 , P Alexandrov and J H Zhao

+ Author Affiliations

PDF

Key words: 功率器件, 碳化硅, 半导体二极管, MPS

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2236 Times PDF downloads: 896 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 265-270
      张玉明, 张义门, P Alexandrov, J H Zhao. 4H-SiC混合 PN/ Schottky二极管的研制(英文)[J]. 半导体学报(英文版), 2001, 22(3): 265-270.
      Citation:
      张玉明, 张义门, P Alexandrov, J H Zhao. 4H-SiC混合 PN/ Schottky二极管的研制(英文)[J]. 半导体学报(英文版), 2001, 22(3): 265-270.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return