Chin. J. Semicond. > 2004, Volume 25 > Issue 1 > 77-81
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GaAs PHEMT器件的退化特性及可靠性表征方法

刘红侠 , 郑雪峰 , 郝跃 , 韩晓亮 , 李培咸 and 张绵

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Key words: 高电子迁移率晶体管, 阈值电压, 碰撞电离, 可靠性表征

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(1): 77-81
      刘红侠, 郑雪峰, 郝跃, 韩晓亮, 李培咸, 张绵. GaAs PHEMT器件的退化特性及可靠性表征方法[J]. 半导体学报(英文版), 2004, 25(1): 77-81.
      Citation:
      刘红侠, 郑雪峰, 郝跃, 韩晓亮, 李培咸, 张绵. GaAs PHEMT器件的退化特性及可靠性表征方法[J]. 半导体学报(英文版), 2004, 25(1): 77-81.
      shu

      • Received Date: 2015-08-19

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