| Citation: |
He Huan, Qin Fuwen, Wu Aimin, Wang Ye'an, Dai Youyong, Jiang Xin, Xu Yin, Gu Biao. Characteristics of GaMnN Film Grown by ECR-PEMOCVD[J]. Journal of Semiconductors, 2007, 28(7): 1053-1057.
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He H, Qin F W, Wu A M, Wang Y, Dai Y Y, Jiang X, Xu Y, Gu B. Characteristics of GaMnN Film Grown by ECR-PEMOCVD[J]. Chin. J. Semicond., 2007, 28(7): 1053.
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Characteristics of GaMnN Film Grown by ECR-PEMOCVD
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Abstract
DMS GaMnN film with a certain concentration of Mn and good crystal qualities was successfully grown on sapphire substrate (α-Al2O3) by ECR-PEMOCVD.The RHEED graphs present a clear spot-like lattice and a surface that is not very smooth,indicating that the GaMnN film is single crystalline and its growth mode was three-dimensional island.XRD analysis shows that the film has a hexagonal structure with c-xis orientation and very good crystallinity.The AFM test result shows that the GaMnN films are composed of many submicron grains with the same orientation.Superconducting quantum interference device (SQUID) measurement shows apparent ferromagnetism at room temperature,and the Curie temperature of the film is about 400K.-
Keywords:
- ECR-PEMOCVD,
- DMS,
- GaMnN,
- ferromagnetism at room temperature,
- Curie temperature
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References
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Proportional views
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