Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1561-1566
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4H-SiC埋沟MOSFET的研制(英文)

郜锦侠 , 张义门 and 张玉明

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Key words: 4H-SiC, 埋沟, MOSFET, 场效应迁移率

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1561-1566
      郜锦侠, 张义门, 张玉明. 4H-SiC埋沟MOSFET的研制(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1561-1566.
      Citation:
      郜锦侠, 张义门, 张玉明. 4H-SiC埋沟MOSFET的研制(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1561-1566.
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      • Received Date: 2015-08-19

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