LETTERS
Li Wenjun, Sun Lingling and Liu Jun
Abstract: A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications.This novel device has good DC and RF characteristics.It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT=6GHz at DC bias of Vg=Vd=3.6V.At 1.5GHz,a power-added efficiency (PAE) of 50% is achieved with an output power of up to 27dBm from this device
Key words: patterned-SOI, LDMOSFET, SIMOX, RF power amplifier
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Article views: 3601 Times PDF downloads: 1542 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 09 November 2006 Online: Published: 01 April 2007
| Citation: |
Li Wenjun, Sun Lingling, Liu Jun. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Journal of Semiconductors, 2007, 28(4): 480-483.
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Li W J, Sun L L, Liu J. A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J]. Chin. J. Semicond., 2007, 28(4): 480.
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