Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 538-542
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带门极双层Si-δ-掺杂GaAs中的奇特非线性耗尽(英文)

卢铁城 , 林理彬 , M LEVIN , V GINODMAN and I SHLIMAK

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Key words: 非线性耗尽, 带门极双层Si-δ-掺杂GaAs

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 538-542
      卢铁城, 林理彬, M LEVIN, V GINODMAN, I SHLIMAK. 带门极双层Si-δ-掺杂GaAs中的奇特非线性耗尽(英文)[J]. 半导体学报(英文版), 2001, 22(5): 538-542.
      Citation:
      卢铁城, 林理彬, M LEVIN, V GINODMAN, I SHLIMAK. 带门极双层Si-δ-掺杂GaAs中的奇特非线性耗尽(英文)[J]. 半导体学报(英文版), 2001, 22(5): 538-542.
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      • Received Date: 2015-08-20

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