Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 513-517
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用改进的调制光电流相移分析技术研究氢化非晶硅的隙态分布

盛殊然 , 孔光临 , 廖显伯 , 夏传钺 and 郑怀德

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 513-517
      盛殊然, 孔光临, 廖显伯, 夏传钺, 郑怀德. 用改进的调制光电流相移分析技术研究氢化非晶硅的隙态分布[J]. 半导体学报(英文版), 1997, 18(7): 513-517.
      Citation:
      盛殊然, 孔光临, 廖显伯, 夏传钺, 郑怀德. 用改进的调制光电流相移分析技术研究氢化非晶硅的隙态分布[J]. 半导体学报(英文版), 1997, 18(7): 513-517.
      shu

      • Received Date: 2015-08-19

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