Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 230-232
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复合型GaAs材料在10.6μm吸收特性的研究

王桂芬 , 张光寅 and 张春平

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 230-232
      王桂芬, 张光寅, 张春平. 复合型GaAs材料在10.6μm吸收特性的研究[J]. 半导体学报(英文版), 1982, 3(3): 230-232.
      Citation:
      王桂芬, 张光寅, 张春平. 复合型GaAs材料在10.6μm吸收特性的研究[J]. 半导体学报(英文版), 1982, 3(3): 230-232.
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      • Received Date: 2015-08-20

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