Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 18-24
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栅控二极管正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性(英文)

何进 , 黄如 , 张兴 , 孙飞 and 王阳元

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Key words: R-G电流, 体陷阱, 陷阱密度和能级分布, SOI器件, 栅控二极管

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 18-24
      何进, 黄如, 张兴, 孙飞, 王阳元. 栅控二极管正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性(英文)[J]. 半导体学报(英文版), 2001, 22(1): 18-24.
      Citation:
      何进, 黄如, 张兴, 孙飞, 王阳元. 栅控二极管正向 R- G电流对 SOI体陷阱特征和硅膜结构的依赖性(英文)[J]. 半导体学报(英文版), 2001, 22(1): 18-24.
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      • Received Date: 2015-08-19

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