Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 401-405

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InAs自组织生长量子点超晶格的电学性质

陈枫 , 封松林 , 杨锡震 , 王志明 , 赵谦 and 温亮生

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 401-405
      陈枫, 封松林, 杨锡震, 王志明, 赵谦, 温亮生. InAs自组织生长量子点超晶格的电学性质[J]. 半导体学报(英文版), 1998, 19(6): 401-405.
      Citation:
      陈枫, 封松林, 杨锡震, 王志明, 赵谦, 温亮生. InAs自组织生长量子点超晶格的电学性质[J]. 半导体学报(英文版), 1998, 19(6): 401-405.
      shu

      • Received Date: 2015-08-18

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