Chin. J. Semicond. > 1997, Volume 18 > Issue 8 > 568-572
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Si衬底上用反应蒸发法制备AlN单晶薄膜

张伟 , 张仕国 and 袁骏

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(8): 568-572
      张伟, 张仕国, 袁骏. Si衬底上用反应蒸发法制备AlN单晶薄膜[J]. 半导体学报(英文版), 1997, 18(8): 568-572.
      Citation:
      张伟, 张仕国, 袁骏. Si衬底上用反应蒸发法制备AlN单晶薄膜[J]. 半导体学报(英文版), 1997, 18(8): 568-572.
      shu

      • Received Date: 2015-08-19

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