Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Chen San; Qian Bo; Chen Kunji; Cen Zhanhong; Liu Yansong; Han Peigao; Ma Zhongyuan; Xu Jun; Li Wei; Huang Xinfan

Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 25-28

PAPERS

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Chen San, Qian Bo, Chen Kunji, Cen Zhanhong, Liu Yansong, Han Peigao, Ma Zhongyuan, Xu Jun, Li Wei and Huang Xinfan

National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China
National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

Abstract: We fabricate a-Si/a-SiNz superlattices and a one-dimensional amorphous silicon nitride photonic crystal microcavity by plasma enhancement chemical vapor deposition (PECVD).To improve the light-emitting efficiency of the nc-Si/a-SiNz superlattices,which are made from a-Si/a-SiNz superlattices by laser annealing,an nc-Si quantum dot array is inserted into the photonic crystal microcavity.Raman spectroscopy and transmission electron microscopy analysis show that nc-Si with a size of 4nm,which is close to the designed thickness of the a-Si sublayers,is formed in the a-Si sublayers.Owing to microcavity effects,the PL peak of the nc-Si/a-SiNzsuperlattices embedded in the microcavity is strongly narrowed,and the intensity of the PL is enhanced by two orders of magnitude with respect to the emission of λ/2-thick nc-Si/a-SiNz superlattices.Light emission at a cavity-resonant frequency from the nc-Si/a-SiNz superlattices is enhanced while other frequencies are forbidden.This leads to the narrowing of the PL spectrum and enhancement of the intensity.

Key words: microcavity, photonic crystal, photoluminescence

1	Broadband photoluminescence and nonlinear chiroptical properties in chiral 2D halide perovskites Dezhong Hu, Zhen Zhang, Kaixuan Zhang, Qian He, Weijie Zhao, et al. Journal of Semiconductors. doi: 10.1088/1674-4926/24110034
2	Precision photonic integration for future large-scale photonic integrated circuits Xiangfei Chen Journal of Semiconductors, 2019, 40(5): 050301. doi: 10.1088/1674-4926/40/5/050301
3	Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography Linghui Zhao, Tongbo Wei, Junxi Wang, Qingfeng Yan, Yiping Zeng, et al. Journal of Semiconductors, 2013, 34(10): 104005. doi: 10.1088/1674-4926/34/10/104005
4	Influence of incident angle on the defect mode of locally doped photonic crystal Jin Wang, Tingdun Wen, Liping Xu, Zufan Liu Journal of Semiconductors, 2013, 34(11): 112003. doi: 10.1088/1674-4926/34/11/112003
5	Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal Wen Feng, Liu Deming, Huang Lirong Journal of Semiconductors, 2010, 31(10): 104006. doi: 10.1088/1674-4926/31/10/104006
6	Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure Liu Xiang, Wei Fuxiang, Liu Hui Journal of Semiconductors, 2009, 30(4): 044007. doi: 10.1088/1674-4926/30/4/044007
7	Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films Ding Wuchang, Zuo Yuhua, Zhang Yun, Guo Jianchuan, Cheng Buwen, et al. Journal of Semiconductors, 2009, 30(10): 102001. doi: 10.1088/1674-4926/30/10/102001
8	Optical properties in 1D photonic crystal structure using Si/C60 multilayers Chen Jing, Tang Jiyu, Han Peide, Chen Junfang Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001
9	Synthesis of ZnS whiskers and their photoluminescence properties Du Yuanyuan, Jie Wanqi, Li Huanyong Journal of Semiconductors, 2009, 30(8): 083005. doi: 10.1088/1674-4926/30/8/083005
10	Visible photoluminescence of porous silicon covered with an HfON dielectric layer Jiang Ran, Zhang Yan Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003
11	One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm Li Lu, Shao Ye, Liu Junqi, Liu Fengqi, Wang Zhanguo, et al. Journal of Semiconductors, 2008, 29(7): 1278-1280.
12	Fabrication of Three-Dimensional Photonic Crystals with Diamond Structure by SLA Technique Wen Jing, Yin Haiqing, Zhang Ruijuan, Cao Wenbin Chinese Journal of Semiconductors , 2007, 28(S1): 357-359.
13	Calculation and Fabrication of Photonic Crystal with Diamond Structure Zhang Ruijuan, Yin Haiqing, Wen Jing, Cao Wenbin Chinese Journal of Semiconductors , 2007, 28(S1): 20-23.
14	Photoluminescence Characterization of HfON∶Tb Films with Sputtering Jiang Ran, Xie Erqing, Jia Changwen, Lin Hongfeng, Pan Xiaojun, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 169-171.
15	Fabrication of a High Quality Etching Mask for Two-Dimensional Photonic Crystal Structures Du Wei, Xu Xingsheng, Han Weihua, Wang Chunxia, Zhang Yang, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1640-1644.
16	Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films Guo Hengqun, Lin Shangxin, Wang Qiming Chinese Journal of Semiconductors , 2006, 27(2): 345-349.
17	Enhancement of Light Extraction of LED by Photonic Crystal Structures Du Wei, Xu Xingsheng, Sun Zenghui, Lu Lin, Gao Junhua, et al. Chinese Journal of Semiconductors , 2006, 27(5): 921-925.
18	Properties of a Photonic Crystal Microcavity Zhao Zhimin, Xu Xingsheng, Li Fang, Liu Yuliang, Chen Hongda, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1034-1037.
19	Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al. Chinese Journal of Semiconductors , 2006, 27(3): 397-402.
20	An All-E-Beam Lithography Process for the Patterningof 2D Photonic Crystal Waveguide Devices Yu Hejun, Yu Jinzhong, Chen Shaowu Chinese Journal of Semiconductors , 2006, 27(11): 1894-1899.

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 3077 Times PDF downloads: 1173 Times Cited by: 0 Times

History

Received: 20 August 2015 Revised: Online: Published: 01 December 2006

We fabricate a-Si/a-SiNz superlattices and a one-dimensional amorphous silicon nitride photonic crystal microcavity by plasma enhancement chemical vapor deposition (PECVD).To improve the light-emitting efficiency of the nc-Si/a-SiNz superlattices,which are made from a-Si/a-SiNz superlattices by laser annealing,an nc-Si quantum dot array is inserted into the photonic crystal microcavity.Raman spectroscopy and transmission electron microscopy analysis show that nc-Si with a size of 4nm,which is close to the designed thickness of the a-Si sublayers,is formed in the a-Si sublayers.Owing to microcavity effects,the PL peak of the nc-Si/a-SiNzsuperlattices embedded in the microcavity is strongly narrowed,and the intensity of the PL is enhanced by two orders of magnitude with respect to the emission of λ/2-thick nc-Si/a-SiNz superlattices.Light emission at a cavity-resonant frequency from the nc-Si/a-SiNz superlattices is enhanced while other frequencies are forbidden.This leads to the narrowing of the PL spectrum and enhancement of the intensity.

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Abstract

References

Proportional views

Catalog

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content