Chin. J. Semicond. > 1995, Volume 16 > Issue 12 > 905-908
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锗硅量子阱异质界面附近缺陷研究

王勤华，陆昉，龚大卫，王建宝，孙恒慧

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(12): 905-908
      王勤华，陆昉，龚大卫，王建宝，孙恒慧. 锗硅量子阱异质界面附近缺陷研究[J]. 半导体学报(英文版), 1995, 16(12): 905-908.
      Citation:
      王勤华，陆昉，龚大卫，王建宝，孙恒慧. 锗硅量子阱异质界面附近缺陷研究[J]. 半导体学报(英文版), 1995, 16(12): 905-908.
      shu

      • Received Date: 2015-08-19

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