Chin. J. Semicond. > 1998, Volume 19 > Issue 12 > 903-907
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衬底温度对纳米Si-SiO_x薄膜的结构和组分的影响

张仕国 , 张伟 , 袁骏 and 樊瑞新

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(12): 903-907
      张仕国, 张伟, 袁骏, 樊瑞新. 衬底温度对纳米Si-SiO_x薄膜的结构和组分的影响[J]. 半导体学报(英文版), 1998, 19(12): 903-907.
      Citation:
      张仕国, 张伟, 袁骏, 樊瑞新. 衬底温度对纳米Si-SiO_x薄膜的结构和组分的影响[J]. 半导体学报(英文版), 1998, 19(12): 903-907.
      shu

      • Received Date: 2015-08-18

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