Citation: |
Zhang Shilin, Guo Weilian, Liang Huilai, Niu Pingjuan, Wang Zhenkun. Switching Characteristics of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2003, 24(S1): 136-139.
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Zhang S L, Guo W L, Liang H L, Niu P J, Wang Z K. Switching Characteristics of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 136.
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Switching Characteristics of Resonant Tunneling Diodes
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Abstract
Using a P8510( C) network analyzer, the scattering parameter ( S22 ) Of AlAs/ InGaAs/AlAs resonant tunneling diodes (RTD) is measured. Equivalent circuit parameters are obtained by curve fit. The RTD switching time is estimated by Using the measured capacitance and aVerage negatiVe differential resistance. The minimum rise time of the sample is estimated to be 21ps. -
References
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