| Citation: |
Wang Jing, Liang Renrong, Xu Yang, Liu Zhihong, Xu Jun, Qian Peixin. Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process[J]. Journal of Semiconductors, 2006, 27(S1): 179-182.
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Wang J, Liang R R, Xu Y, Liu Z H, Xu J, Qian P X. Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process[J]. Chin. J. Semicond., 2006, 27(13): 179.
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Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process
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Abstract
Strained Si/uniform relaxed Si0.9Ge0.1/graded relaxed SiGe/Si substrate is fabricated using reduced pressure chemical vapor deposition process.The surface roughness and dislocation density are effectively decreased by optimizing the Ge grading rate in the graded SiGe buffer layer and the SiGe epitaxial process.Compared with samples without graded SiGe buffer,the surface roughness (root mean square) of strained Si with the graded SiGe buffer is improved form 3.07 to 0.75nm.The dislocation density is about 5E4cm-2,and the strain in the strained Si cap layer is about 0.45%.-
Keywords:
- strained Si,
- SiGe virtual substrate,
- RPCVD
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References
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Proportional views
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