Chin. J. Semicond. > 1985, Volume 6 > Issue 5 > 495-502
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中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心

杜永昌 , 张玉峰 and 孟祥提

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(5): 495-502
      杜永昌, 张玉峰, 孟祥提. 中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心[J]. 半导体学报(英文版), 1985, 6(5): 495-502.
      Citation:
      杜永昌, 张玉峰, 孟祥提. 中子辐照p型硅中的空穴陷阱和与氢有关的深能级中心[J]. 半导体学报(英文版), 1985, 6(5): 495-502.
      shu

      • Received Date: 2015-08-20

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